Research Focus
High Anisotropy Domain Wall DevicesPerpendicular Magnetic Anisotropy Pseudo Spin Valves and Magnetic Tunnel Junctions |
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Doctorate Thesis:
Perpendicular Magnetic Anisotropy Materials for Spintronics Applications
Ho Pin's doctorate work focuses on the study of perpendicular magnetic anisotropy materials in spin-electronics, in particular in the field of data storage. MRAM, with its non-volatility, high speed, high density and endurance is widely sought after for future generations of data storage. L10-FePt is studied as the ferromagnetic material of the MRAM as its high perpendicular anisotropy allows a reduction in the MRAM device size while maintaining the thermal stability. Further miniaturization of the MRAM can be achieved with the use of spin transfer torque magnetization switching. The study of L10‐FePt for this application is also crucial as its high perpendicular anisotropy reduces the critical current density of the STT-MRAM.
A copy of the thesis can be found at:
http://scholarbank.nus.edu.sg/handle/10635/48324
A copy of the thesis can be found at:
http://scholarbank.nus.edu.sg/handle/10635/48324